Chipset
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Northbridge VIA P4M266 (VT8751) rev. 00
Southbridge VIA VT8235 rev. 00
Graphic Interface AGP
AGP Revision 2.0
AGP Transfer Rate 4x
AGP SBA not supported, not enabled
Memory Type DDR
Memory Size 512 MBytes
Memory Frequency 133.3 MHz (1:1)
DRAM Interleave 4-way
CAS# latency (CL) 2.5
RAS# to CAS# delay (tRCD) 3
RAS# Precharge (tRP) 3
Cycle Time (tRAS) 6
Memory SPD
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DIMM # 1
SMBus address 0x50
Memory type DDR
Manufacturer (ID) Samsung (CE00000000000000)
Size 512 MBytes
Max bandwidth PC3200 (200 MHz)
Part number M3 68L6423HUN-CCC
Serial number 774D7DB0
Manufacturing date Week 39/Year 08
Number of banks 2
Data width 64 bits
Correction None
Registered no
Buffered no
Nominal Voltage 2.50 Volts
EPP no
XMP no
JEDEC timings table CL-tRCD-tRP-tRAS-tRC @ frequency
JEDEC #1 2.5-3-3-7-n.a. @ 166 MHz
JEDEC #2 3.0-3-3-8-n.a. @ 200 MHz
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